11N80C3, N Channel MOSFET 800V 11A

The 11N80C3 is an N Channel MOSFET with a maximum collector current of 11A and a maximum collector-base voltage of 80V. It is designed for through-hole mounting and belongs to the IGBT type. This Infineon branded power transistor is suitable for high power applications, offering a maximum base-emitter saturation voltage of -800V and a collector-emitter voltage of 11V. With 3 elements per chip, it is ideal for handling large amounts of current and voltage in electronic systems.

No Return:

11N80C3/CAB50

HD12 EBE12

INFINEON