Part Details:
- The RJH3077 is a silicon N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-speed power switching. It comes in a TO-3P package.
- Here are some key specifications and characteristics of the RJH3077 based on the provided search results
- Voltages: Collector to emitter voltage of 360 V and gate to emitter voltage of ±30 V.
- Currents: Collector current of 30 A, collector peak current of 200 A, and collector to emitter diode forward peak current of 100 A.
- Dissipation and Thermal: Collector dissipation of 20 W and junction to case thermal impedance of 6.25 ℃/W.
- Temperatures: Junction temperature of 150 ℃ and storage temperature range of -55 to +150 ℃.
- Switching Speed: High-speed switching with typical turn-on time (t_r) of 80 ns and turn-off time (t_f) of 150 ns.
- Voltage and Leak Current: Low collector to emitter saturation voltage (V_CE(sat)) of 1.5 V (typical) and low leak current (I_CES) of 1 μA (maximum).
- Built-in Diode: Includes a built-in fast recovery diode with a typical forward voltage (V_F) of 1.4 V and reverse recovery time (t_rr) of 23 ns.
Shipping Information:
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No Return:
RJH3077/CAB69
HD04 EBE04
