Part Details:
RJP2557, power transistor or MOSFET NPN-Chanel
- Type: NPN silicon power transistor according to some sources, while others refer to it as a power MOSFET. It's crucial to confirm the specific datasheet for the part you are working with to determine its exact type.
- Manufacturer: Primarily Renesas (formerly Hitachi/Renesas).
- Key features (based on transistor description):
- High breakdown voltage (VCEO = 500 V)
- Low saturation voltage (VCE(sat) = 1.2 V max)
- High current gain (hFE = 200 min)
- Packaging: Typically available in a TO-3P package.
- The RJP2557, whether a transistor or MOSFET, is suitable for applications requiring power switching and amplification. Given the specifications found, it could be relevant in areas such as:
- PDP (Plasma Display Panel) related applications
- Switch-mode power supplies (SMPS)
Shipping Information:
- International shipping surcharge is calculated by item weight
- Shipping is through USPS First Class Mail
- Handling time: 1 business day (no shipping on Sundays and holidays)
No Return:
RJP2557/CAB69
HD02 EBE02
