RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT

Part Details:

The RJP3047 is a high-speed, high-power silicon N-channel IGBT manufactured by Renesas. Designed for through-hole mounting, this N-channel enhancement mode MOSFET has a maximum DC collector current of 30A and a maximum collector-base voltage of 330V. With three pins, this transistor is suitable for various electronic applications requiring high power and efficiency.

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RJP3047/CAB42

HD02 EBE02

Renesas