You have no items in your shopping cart.
Menu
Picture of RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT
Picture of RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT Picture of RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT

RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT

RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT
Be the first to review this product
Availability: 2 in stock
Manufacturer part number: RJP3047, 330V 30A, High Speed, High Power Silicon N Channel IGBT
Old price: $17.99
$14.99
Ship to
*
*
Shipping Method
Name
Estimated Delivery
Price
No shipping options

The RJP3047 is a high-speed, high-power silicon N-channel IGBT manufactured by Renesas. Designed for through-hole mounting, this N-channel enhancement mode MOSFET has a maximum DC collector current of 30A and a maximum collector-base voltage of 330V. With three pins, this transistor is suitable for various electronic applications requiring high power and efficiency.

RJP3047/CAB42

HD02 EBE02

Renesas

Product tags
Information
Customer service
Copyright © 2026 HDTV PARTS. All rights reserved.
Powered by nopCommerce